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Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma

Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure can produce high-density reactive radicals (N...

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Autores principales: Nguyen, Thi-Thuy-Nga, Shinoda, Kazunori, Hamamura, Hirotaka, Maeda, Kenji, Yokogawa, Kenetsu, Izawa, Masaru, Ishikawa, Kenji, Hori, Masaru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9701795/
https://www.ncbi.nlm.nih.gov/pubmed/36437291
http://dx.doi.org/10.1038/s41598-022-24949-1
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author Nguyen, Thi-Thuy-Nga
Shinoda, Kazunori
Hamamura, Hirotaka
Maeda, Kenji
Yokogawa, Kenetsu
Izawa, Masaru
Ishikawa, Kenji
Hori, Masaru
author_facet Nguyen, Thi-Thuy-Nga
Shinoda, Kazunori
Hamamura, Hirotaka
Maeda, Kenji
Yokogawa, Kenetsu
Izawa, Masaru
Ishikawa, Kenji
Hori, Masaru
author_sort Nguyen, Thi-Thuy-Nga
collection PubMed
description Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure can produce high-density reactive radicals (NH, H, and OH) for TiAlC surface modifications such as hydrogenation and methylamination. A proposed mechanism for dry etching of TiAlC is considered with the formation of the volatile products from the modified layer.
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spelling pubmed-97017952022-11-29 Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma Nguyen, Thi-Thuy-Nga Shinoda, Kazunori Hamamura, Hirotaka Maeda, Kenji Yokogawa, Kenetsu Izawa, Masaru Ishikawa, Kenji Hori, Masaru Sci Rep Article Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure can produce high-density reactive radicals (NH, H, and OH) for TiAlC surface modifications such as hydrogenation and methylamination. A proposed mechanism for dry etching of TiAlC is considered with the formation of the volatile products from the modified layer. Nature Publishing Group UK 2022-11-27 /pmc/articles/PMC9701795/ /pubmed/36437291 http://dx.doi.org/10.1038/s41598-022-24949-1 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Nguyen, Thi-Thuy-Nga
Shinoda, Kazunori
Hamamura, Hirotaka
Maeda, Kenji
Yokogawa, Kenetsu
Izawa, Masaru
Ishikawa, Kenji
Hori, Masaru
Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
title Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
title_full Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
title_fullStr Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
title_full_unstemmed Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
title_short Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
title_sort dry etching of ternary metal carbide tialc via surface modification using floating wire-assisted vapor plasma
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9701795/
https://www.ncbi.nlm.nih.gov/pubmed/36437291
http://dx.doi.org/10.1038/s41598-022-24949-1
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