Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices

[Image: see text] Memristive devices relying on redox-based resistive switching mechanisms represent promising candidates for the development of novel computing paradigms beyond von Neumann architecture. Recent advancements in understanding physicochemical phenomena underlying resistive switching ha...

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Detalles Bibliográficos
Autores principales: Milano, Gianluca, Miranda, Enrique, Fretto, Matteo, Valov, Ilia, Ricciardi, Carlo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9716557/
https://www.ncbi.nlm.nih.gov/pubmed/36396122
http://dx.doi.org/10.1021/acsami.2c11022

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9716557/
https://www.ncbi.nlm.nih.gov/pubmed/36396122
http://dx.doi.org/10.1021/acsami.2c11022

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