Epitaxial Growth of β-Ga(2)O(3) Thin Films on Si with YSZ Buffer Layer

[Image: see text] We report the epitaxial growth of (2̅01)-oriented β-Ga(2)O(3) thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga(2)O(3) thin films possess a biaxial compressive strain on...

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Detalles Bibliográficos
Autores principales: Choi, Hyung-Jin, Lee, Jun Young, Jung, Soo Young, Ning, Ruiguang, Kim, Min-Seok, Jung, Sung-Jin, Won, Sung Ok, Baek, Seung-Hyub, Jang, Ji-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9730745/
https://www.ncbi.nlm.nih.gov/pubmed/36506186
http://dx.doi.org/10.1021/acsomega.2c04387

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9730745/
https://www.ncbi.nlm.nih.gov/pubmed/36506186
http://dx.doi.org/10.1021/acsomega.2c04387

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