Epitaxial Growth of β-Ga(2)O(3) Thin Films on Si with YSZ Buffer Layer

[Image: see text] We report the epitaxial growth of (2̅01)-oriented β-Ga(2)O(3) thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga(2)O(3) thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga(2)O(3) thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga(2)O(3) thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga(2)O(3) and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga(2)O(3) thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.