Cargando…

Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction

Developing advanced thermal interface materials (TIMs) to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor devices. Based on the ultra-high basal-plane thermal condu...

Descripción completa

Detalles Bibliográficos
Autores principales: Dai, Wen, Ren, Xing-Jie, Yan, Qingwei, Wang, Shengding, Yang, Mingyang, Lv, Le, Ying, Junfeng, Chen, Lu, Tao, Peidi, Sun, Liwen, Xue, Chen, Yu, Jinhong, Song, Chengyi, Nishimura, Kazuhito, Jiang, Nan, Lin, Cheng-Te
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9733747/
https://www.ncbi.nlm.nih.gov/pubmed/36484932
http://dx.doi.org/10.1007/s40820-022-00979-2
_version_ 1784846440730722304
author Dai, Wen
Ren, Xing-Jie
Yan, Qingwei
Wang, Shengding
Yang, Mingyang
Lv, Le
Ying, Junfeng
Chen, Lu
Tao, Peidi
Sun, Liwen
Xue, Chen
Yu, Jinhong
Song, Chengyi
Nishimura, Kazuhito
Jiang, Nan
Lin, Cheng-Te
author_facet Dai, Wen
Ren, Xing-Jie
Yan, Qingwei
Wang, Shengding
Yang, Mingyang
Lv, Le
Ying, Junfeng
Chen, Lu
Tao, Peidi
Sun, Liwen
Xue, Chen
Yu, Jinhong
Song, Chengyi
Nishimura, Kazuhito
Jiang, Nan
Lin, Cheng-Te
author_sort Dai, Wen
collection PubMed
description Developing advanced thermal interface materials (TIMs) to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor devices. Based on the ultra-high basal-plane thermal conductivity, graphene is an ideal candidate for preparing high-performance TIMs, preferably to form a vertically aligned structure so that the basal-plane of graphene is consistent with the heat transfer direction of TIM. However, the actual interfacial heat transfer efficiency of currently reported vertically aligned graphene TIMs is far from satisfactory. In addition to the fact that the thermal conductivity of the vertically aligned TIMs can be further improved, another critical factor is the limited actual contact area leading to relatively high contact thermal resistance (20–30 K mm(2) W(−1)) of the “solid–solid” mating interface formed by the vertical graphene and the rough chip/heat sink. To solve this common problem faced by vertically aligned graphene, in this work, we combined mechanical orientation and surface modification strategy to construct a three-tiered TIM composed of mainly vertically aligned graphene in the middle and micrometer-thick liquid metal as a cap layer on upper and lower surfaces. Based on rational graphene orientation regulation in the middle tier, the resultant graphene-based TIM exhibited an ultra-high thermal conductivity of 176 W m(−1) K(−1). Additionally, we demonstrated that the liquid metal cap layer in contact with the chip/heat sink forms a “liquid–solid” mating interface, significantly increasing the effective heat transfer area and giving a low contact thermal conductivity of 4–6 K mm(2) W(−1) under packaging conditions. This finding provides valuable guidance for the design of high-performance TIMs based on two-dimensional materials and improves the possibility of their practical application in electronic thermal management. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-00979-2.
format Online
Article
Text
id pubmed-9733747
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher Springer Nature Singapore
record_format MEDLINE/PubMed
spelling pubmed-97337472022-12-10 Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction Dai, Wen Ren, Xing-Jie Yan, Qingwei Wang, Shengding Yang, Mingyang Lv, Le Ying, Junfeng Chen, Lu Tao, Peidi Sun, Liwen Xue, Chen Yu, Jinhong Song, Chengyi Nishimura, Kazuhito Jiang, Nan Lin, Cheng-Te Nanomicro Lett Article Developing advanced thermal interface materials (TIMs) to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor devices. Based on the ultra-high basal-plane thermal conductivity, graphene is an ideal candidate for preparing high-performance TIMs, preferably to form a vertically aligned structure so that the basal-plane of graphene is consistent with the heat transfer direction of TIM. However, the actual interfacial heat transfer efficiency of currently reported vertically aligned graphene TIMs is far from satisfactory. In addition to the fact that the thermal conductivity of the vertically aligned TIMs can be further improved, another critical factor is the limited actual contact area leading to relatively high contact thermal resistance (20–30 K mm(2) W(−1)) of the “solid–solid” mating interface formed by the vertical graphene and the rough chip/heat sink. To solve this common problem faced by vertically aligned graphene, in this work, we combined mechanical orientation and surface modification strategy to construct a three-tiered TIM composed of mainly vertically aligned graphene in the middle and micrometer-thick liquid metal as a cap layer on upper and lower surfaces. Based on rational graphene orientation regulation in the middle tier, the resultant graphene-based TIM exhibited an ultra-high thermal conductivity of 176 W m(−1) K(−1). Additionally, we demonstrated that the liquid metal cap layer in contact with the chip/heat sink forms a “liquid–solid” mating interface, significantly increasing the effective heat transfer area and giving a low contact thermal conductivity of 4–6 K mm(2) W(−1) under packaging conditions. This finding provides valuable guidance for the design of high-performance TIMs based on two-dimensional materials and improves the possibility of their practical application in electronic thermal management. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-00979-2. Springer Nature Singapore 2022-12-09 /pmc/articles/PMC9733747/ /pubmed/36484932 http://dx.doi.org/10.1007/s40820-022-00979-2 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Dai, Wen
Ren, Xing-Jie
Yan, Qingwei
Wang, Shengding
Yang, Mingyang
Lv, Le
Ying, Junfeng
Chen, Lu
Tao, Peidi
Sun, Liwen
Xue, Chen
Yu, Jinhong
Song, Chengyi
Nishimura, Kazuhito
Jiang, Nan
Lin, Cheng-Te
Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction
title Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction
title_full Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction
title_fullStr Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction
title_full_unstemmed Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction
title_short Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction
title_sort ultralow interfacial thermal resistance of graphene thermal interface materials with surface metal liquefaction
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9733747/
https://www.ncbi.nlm.nih.gov/pubmed/36484932
http://dx.doi.org/10.1007/s40820-022-00979-2
work_keys_str_mv AT daiwen ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT renxingjie ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT yanqingwei ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT wangshengding ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT yangmingyang ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT lvle ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT yingjunfeng ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT chenlu ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT taopeidi ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT sunliwen ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT xuechen ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT yujinhong ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT songchengyi ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT nishimurakazuhito ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT jiangnan ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction
AT linchengte ultralowinterfacialthermalresistanceofgraphenethermalinterfacematerialswithsurfacemetalliquefaction