A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory

In this paper, a fast-transient-response NMOS low-dropout regulator (LDO) with a wide load-capacitance range was presented to provide a V/2 read bias for cross-point memory. To utilize the large dropout voltage in the V/2 bias scheme, a fast loop consisting of NMOS and flipped voltage amplifier (FVA...

Descripción completa

Detalles Bibliográficos
Autores principales: He, Luchang, Li, Xi, Xu, Siqiu, Pan, Guochang, Xie, Chenchen, Chen, Houpeng, Song, Zhitang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9735870/
https://www.ncbi.nlm.nih.gov/pubmed/36502074
http://dx.doi.org/10.3390/s22239367

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9735870/
https://www.ncbi.nlm.nih.gov/pubmed/36502074
http://dx.doi.org/10.3390/s22239367

Ejemplares similares