Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance model of AlGaN/GaN HEMT, the thickness of the host s...

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Detalles Bibliográficos
Autores principales: Chakraborty, Surajit, Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Cho, Chu-Young, Kim, Jae-Moo, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kwon, Hyuk-Min, Kim, Dae-Hyun, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9736341/
https://www.ncbi.nlm.nih.gov/pubmed/36499910
http://dx.doi.org/10.3390/ma15238415

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9736341/
https://www.ncbi.nlm.nih.gov/pubmed/36499910
http://dx.doi.org/10.3390/ma15238415

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