Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film Analyzed Using Second Harmonic Generation and Simplified Bond-Hyperpolarizability Model

In fabricating advanced silicon (Si)-based metal–oxide semiconductors, the ability to inspect dopant distribution in Si ultrathin films (tens of nm) is crucial for monitoring the amount of dopant diffusion. Here, we perform an anisotropic reflective second harmonic generation (SHG) measurement to de...

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Detalles Bibliográficos
Autores principales: Chen, Wei-Ting, Yen, Ting-Yu, Hung, Yang-Hao, Lo, Kuang-Yao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9736357/
https://www.ncbi.nlm.nih.gov/pubmed/36500930
http://dx.doi.org/10.3390/nano12234307

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9736357/
https://www.ncbi.nlm.nih.gov/pubmed/36500930
http://dx.doi.org/10.3390/nano12234307

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