Atomic-Level Sn Doping Effect in Ga(2)O(3) Films Using Plasma-Enhanced Atomic Layer Deposition

In this work, the atomic level doping of Sn into Ga(2)O(3) films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical properties, energy band alignment, and electrica...

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Detalles Bibliográficos
Autores principales: Shen, Yi, Ma, Hong-Ping, Gu, Lin, Zhang, Jie, Huang, Wei, Zhu, Jing-Tao, Zhang, Qing-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9737259/
https://www.ncbi.nlm.nih.gov/pubmed/36500879
http://dx.doi.org/10.3390/nano12234256

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9737259/
https://www.ncbi.nlm.nih.gov/pubmed/36500879
http://dx.doi.org/10.3390/nano12234256

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