Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection

The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect...

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Detalles Bibliográficos
Autores principales: Li, Titao, Lu, Yaoping, Chen, Zuxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9737869/
https://www.ncbi.nlm.nih.gov/pubmed/36500790
http://dx.doi.org/10.3390/nano12234169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9737869/
https://www.ncbi.nlm.nih.gov/pubmed/36500790
http://dx.doi.org/10.3390/nano12234169

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