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Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection
The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9737869/ https://www.ncbi.nlm.nih.gov/pubmed/36500790 http://dx.doi.org/10.3390/nano12234169 |