Fabrication of Ga(2)O(3) Schottky Barrier Diode and Heterojunction Diode by MOCVD

In this article, we reported on a Ga(2)O(3)-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga(2)O(3) drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was st...

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Detalles Bibliográficos
Autores principales: Jiao, Teng, Chen, Wei, Li, Zhengda, Diao, Zhaoti, Dang, Xinming, Chen, Peiran, Dong, Xin, Zhang, Yuantao, Zhang, Baolin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738363/
https://www.ncbi.nlm.nih.gov/pubmed/36499777
http://dx.doi.org/10.3390/ma15238280

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738363/
https://www.ncbi.nlm.nih.gov/pubmed/36499777
http://dx.doi.org/10.3390/ma15238280

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