Fabrication of Ga(2)O(3) Schottky Barrier Diode and Heterojunction Diode by MOCVD

In this article, we reported on a Ga(2)O(3)-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga(2)O(3) drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga(2)O(3) heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm(2) and 6.2 mΩ·cm(2), breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm(−2) and 88 MW·cm(−2), respectively. Besides, both devices exhibit a current on/off ratio of more than 10(10). This shows the prospect of MOCVD in power device manufacture.