Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit

In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can r...

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Detalles Bibliográficos
Autores principales: Chen, Ruibo, Wei, Hao, Liu, Hongxia, Liu, Zhiwei, Chen, Yaolin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738444/
https://www.ncbi.nlm.nih.gov/pubmed/36500871
http://dx.doi.org/10.3390/nano12234250

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738444/
https://www.ncbi.nlm.nih.gov/pubmed/36500871
http://dx.doi.org/10.3390/nano12234250

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