Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit

In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can r...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Ruibo, Wei, Hao, Liu, Hongxia, Liu, Zhiwei, Chen, Yaolin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738444/
https://www.ncbi.nlm.nih.gov/pubmed/36500871
http://dx.doi.org/10.3390/nano12234250
_version_ 1784847544401002496
author Chen, Ruibo
Wei, Hao
Liu, Hongxia
Liu, Zhiwei
Chen, Yaolin
author_facet Chen, Ruibo
Wei, Hao
Liu, Hongxia
Liu, Zhiwei
Chen, Yaolin
author_sort Chen, Ruibo
collection PubMed
description In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can realize ~2 V lower trigger voltage. Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in the same area consumption, and thus it is more suitable for 2.5 V circuits ESD protections considering the CDM protection applications.
format Online
Article
Text
id pubmed-9738444
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-97384442022-12-11 Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit Chen, Ruibo Wei, Hao Liu, Hongxia Liu, Zhiwei Chen, Yaolin Nanomaterials (Basel) Article In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can realize ~2 V lower trigger voltage. Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in the same area consumption, and thus it is more suitable for 2.5 V circuits ESD protections considering the CDM protection applications. MDPI 2022-11-29 /pmc/articles/PMC9738444/ /pubmed/36500871 http://dx.doi.org/10.3390/nano12234250 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Ruibo
Wei, Hao
Liu, Hongxia
Liu, Zhiwei
Chen, Yaolin
Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
title Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
title_full Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
title_fullStr Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
title_full_unstemmed Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
title_short Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
title_sort ultra-low-voltage-triggered silicon controlled rectifier esd protection device for 2.5 v nano integrated circuit
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738444/
https://www.ncbi.nlm.nih.gov/pubmed/36500871
http://dx.doi.org/10.3390/nano12234250
work_keys_str_mv AT chenruibo ultralowvoltagetriggeredsiliconcontrolledrectifieresdprotectiondevicefor25vnanointegratedcircuit
AT weihao ultralowvoltagetriggeredsiliconcontrolledrectifieresdprotectiondevicefor25vnanointegratedcircuit
AT liuhongxia ultralowvoltagetriggeredsiliconcontrolledrectifieresdprotectiondevicefor25vnanointegratedcircuit
AT liuzhiwei ultralowvoltagetriggeredsiliconcontrolledrectifieresdprotectiondevicefor25vnanointegratedcircuit
AT chenyaolin ultralowvoltagetriggeredsiliconcontrolledrectifieresdprotectiondevicefor25vnanointegratedcircuit

Ejemplares similares