High-Quality SiO(2)/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics. Its great band-gap makes it a promising material for the fabrication of diamond–metal–oxide field effects transistor gates. Having a sufficien...

Descripción completa

Detalles Bibliográficos
Autores principales: Cañas, Jesús, Reyes, Daniel F., Zakhtser, Alter, Dussarrat, Christian, Teramoto, Takashi, Gutiérrez, Marina, Gheeraert, Etienne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739220/
https://www.ncbi.nlm.nih.gov/pubmed/36500747
http://dx.doi.org/10.3390/nano12234125

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739220/
https://www.ncbi.nlm.nih.gov/pubmed/36500747
http://dx.doi.org/10.3390/nano12234125

Ejemplares similares