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High-Quality SiO(2)/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics. Its great band-gap makes it a promising material for the fabrication of diamond–metal–oxide field effects transistor gates. Having a sufficien...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739220/ https://www.ncbi.nlm.nih.gov/pubmed/36500747 http://dx.doi.org/10.3390/nano12234125 |