Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide

In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (C–V) and current-voltage (I–V) characteristics. The depe...

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Detalles Bibliográficos
Autores principales: Lebedev, Alexander A., Kozlovski, Vitali V., Davydovskaya, Klavdia S., Kuzmin, Roman A., Levinshtein, Mikhail E., Strel’chuk, Anatolii M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739460/
https://www.ncbi.nlm.nih.gov/pubmed/36500133
http://dx.doi.org/10.3390/ma15238637

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739460/
https://www.ncbi.nlm.nih.gov/pubmed/36500133
http://dx.doi.org/10.3390/ma15238637

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