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Effects of Oxygen Flow Rate on Metal-to-Insulator Transition Characteristics in NbO(x)-Based Selectors

In this work, NbOx-based selector devices were fabricated by sputtering deposition systems. Metal-to-insulator transition characteristics of the device samples were investigated depending on the oxygen flow rate (3.5, 4.5, and 5.5 sccm) and the deposition time. The device stack was scanned by transm...

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Detalles Bibliográficos
Autores principales: Kwon, Osung, Lee, Hongmin, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739534/
https://www.ncbi.nlm.nih.gov/pubmed/36500071
http://dx.doi.org/10.3390/ma15238575