The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga(2)O(3) Thin Films on C-Plane Sapphire

β-Ga(2)O(3) thin films grown on widely available c-plane sapphire substrates typically exhibit structural defects due to significant lattice and thermal expansion mismatch, which hinder the use of such films in electronic devices. In this work, we studied the impact of a nucleation layer on MOCVD-gr...

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Detalles Bibliográficos
Autores principales: Dimitrocenko, Lauris, Strikis, Gundars, Polyakov, Boris, Bikse, Liga, Oras, Sven, Butanovs, Edgars
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739698/
https://www.ncbi.nlm.nih.gov/pubmed/36499857
http://dx.doi.org/10.3390/ma15238362

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9739698/
https://www.ncbi.nlm.nih.gov/pubmed/36499857
http://dx.doi.org/10.3390/ma15238362

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