Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the tota...

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Detalles Bibliográficos
Autores principales: Song, Myeong-Ho, Ko, Woon-San, Kim, Geun-Ho, Choi, Dong-Hyeuk, Lee, Ga-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740046/
https://www.ncbi.nlm.nih.gov/pubmed/36500965
http://dx.doi.org/10.3390/nano12234342

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740046/
https://www.ncbi.nlm.nih.gov/pubmed/36500965
http://dx.doi.org/10.3390/nano12234342

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