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Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the tota...

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Autores principales: Song, Myeong-Ho, Ko, Woon-San, Kim, Geun-Ho, Choi, Dong-Hyeuk, Lee, Ga-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740046/
https://www.ncbi.nlm.nih.gov/pubmed/36500965
http://dx.doi.org/10.3390/nano12234342
_version_ 1784847961116639232
author Song, Myeong-Ho
Ko, Woon-San
Kim, Geun-Ho
Choi, Dong-Hyeuk
Lee, Ga-Won
author_facet Song, Myeong-Ho
Ko, Woon-San
Kim, Geun-Ho
Choi, Dong-Hyeuk
Lee, Ga-Won
author_sort Song, Myeong-Ho
collection PubMed
description In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the total gas amount during the film deposition. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and X-ray reflectivity (XRR) were used to investigate the composition and bonding structures of the SiCN film. An atomic force microscope (AFM) was used to examine the surface morphology of the SiCN films to see the porosity. The analysis indicated that Si–N bonds were dominant in the SiCN films, and a higher carbon concentration made the film more porous. To evaluate the oxygen permeation, a highly accelerated temperature and humidity stress test (HAST) evaluation was performed. The films grown at a high 4MS PPR were more susceptible to oxygen penetration, which changed Si–N bonds to Si–N–O bonds during the HAST. These results indicate that increasing the 4MS PPR made the SiCN film more porous and containable for oxygen. As an application, for the first time, SiCN dielectric film is suggested to be applied to resistive random access memory (RRAM) as an oxygen reservoir to store oxygen and prevent a reaction between metal electrodes and oxygen. The endurance characteristics of RRAM are found to be enhanced by applying the SiCN.
format Online
Article
Text
id pubmed-9740046
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-97400462022-12-11 Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications Song, Myeong-Ho Ko, Woon-San Kim, Geun-Ho Choi, Dong-Hyeuk Lee, Ga-Won Nanomaterials (Basel) Article In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the total gas amount during the film deposition. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and X-ray reflectivity (XRR) were used to investigate the composition and bonding structures of the SiCN film. An atomic force microscope (AFM) was used to examine the surface morphology of the SiCN films to see the porosity. The analysis indicated that Si–N bonds were dominant in the SiCN films, and a higher carbon concentration made the film more porous. To evaluate the oxygen permeation, a highly accelerated temperature and humidity stress test (HAST) evaluation was performed. The films grown at a high 4MS PPR were more susceptible to oxygen penetration, which changed Si–N bonds to Si–N–O bonds during the HAST. These results indicate that increasing the 4MS PPR made the SiCN film more porous and containable for oxygen. As an application, for the first time, SiCN dielectric film is suggested to be applied to resistive random access memory (RRAM) as an oxygen reservoir to store oxygen and prevent a reaction between metal electrodes and oxygen. The endurance characteristics of RRAM are found to be enhanced by applying the SiCN. MDPI 2022-12-06 /pmc/articles/PMC9740046/ /pubmed/36500965 http://dx.doi.org/10.3390/nano12234342 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Song, Myeong-Ho
Ko, Woon-San
Kim, Geun-Ho
Choi, Dong-Hyeuk
Lee, Ga-Won
Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
title Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
title_full Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
title_fullStr Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
title_full_unstemmed Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
title_short Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
title_sort studies on oxygen permeation resistance of sicn thin film and rram applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740046/
https://www.ncbi.nlm.nih.gov/pubmed/36500965
http://dx.doi.org/10.3390/nano12234342
work_keys_str_mv AT songmyeongho studiesonoxygenpermeationresistanceofsicnthinfilmandrramapplications
AT kowoonsan studiesonoxygenpermeationresistanceofsicnthinfilmandrramapplications
AT kimgeunho studiesonoxygenpermeationresistanceofsicnthinfilmandrramapplications
AT choidonghyeuk studiesonoxygenpermeationresistanceofsicnthinfilmandrramapplications
AT leegawon studiesonoxygenpermeationresistanceofsicnthinfilmandrramapplications