Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG)...

Descripción completa

Detalles Bibliográficos
Autores principales: Ren, Fang-Bin, Jiang, Shi-Cong, Hsu, Chia-Hsun, Zhang, Xiao-Ying, Gao, Peng, Wu, Wan-Yu, Chiu, Yi-Jui, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740686/
https://www.ncbi.nlm.nih.gov/pubmed/36500217
http://dx.doi.org/10.3390/molecules27238123

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740686/
https://www.ncbi.nlm.nih.gov/pubmed/36500217
http://dx.doi.org/10.3390/molecules27238123

Ejemplares similares