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Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG)...

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Detalles Bibliográficos
Autores principales:	Ren, Fang-Bin, Jiang, Shi-Cong, Hsu, Chia-Hsun, Zhang, Xiao-Ying, Gao, Peng, Wu, Wan-Yu, Chiu, Yi-Jui, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740686/ https://www.ncbi.nlm.nih.gov/pubmed/36500217 http://dx.doi.org/10.3390/molecules27238123

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