In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes

Highly efficient indium gallium nitride (InGaN)-based yellow light-emitting diodes (LEDs) with low efficiency droop have always been pursued for next-generation displays and lighting products. In this work, we report an InGaN quantum barrier (QB) with linear-increase In-composition along [0001] dire...

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Detalles Bibliográficos
Autores principales: Cui, Siyuan, Tao, Guoyi, Gong, Liyan, Zhao, Xiaoyu, Zhou, Shengjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740952/
https://www.ncbi.nlm.nih.gov/pubmed/36500144
http://dx.doi.org/10.3390/ma15238649

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740952/
https://www.ncbi.nlm.nih.gov/pubmed/36500144
http://dx.doi.org/10.3390/ma15238649

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