Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-base...

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Detalles Bibliográficos
Autores principales: Ma, Yue, Bi, Jinshun, Wang, Hanbin, Fan, Linjie, Zhao, Biyao, Shen, Lizhi, Liu, Mengxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9741056/
https://www.ncbi.nlm.nih.gov/pubmed/36500968
http://dx.doi.org/10.3390/nano12234344

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9741056/
https://www.ncbi.nlm.nih.gov/pubmed/36500968
http://dx.doi.org/10.3390/nano12234344

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