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Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures
In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-base...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9741056/ https://www.ncbi.nlm.nih.gov/pubmed/36500968 http://dx.doi.org/10.3390/nano12234344 |