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Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference
A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC−40 nm process technology. It consumed 9.6 [Formula: see text] at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipola...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9741424/ https://www.ncbi.nlm.nih.gov/pubmed/36502168 http://dx.doi.org/10.3390/s22239466 |