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Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values o...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9763523/ https://www.ncbi.nlm.nih.gov/pubmed/36534366 http://dx.doi.org/10.1186/s11671-022-03762-9 |