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Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si

GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values o...

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Autores principales: Kim, HoSung, Geum, Dae-Myeong, Ko, Young-Ho, Han, Won-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9763523/
https://www.ncbi.nlm.nih.gov/pubmed/36534366
http://dx.doi.org/10.1186/s11671-022-03762-9
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author Kim, HoSung
Geum, Dae-Myeong
Ko, Young-Ho
Han, Won-Seok
author_facet Kim, HoSung
Geum, Dae-Myeong
Ko, Young-Ho
Han, Won-Seok
author_sort Kim, HoSung
collection PubMed
description GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values of LT-DFL and HT-DFL were 5.2 × 10(7) cm(−2) and 1.5 × 10(7) cm(−2), respectively. The 1.5 × 10(7) cm(−2) of TDD in HT-DFL is reduced by almost one order compared to the 1.2 × 10(8) cm(−2) of that in the control sample without DFLs. The annihilation process was mainly observed in the HT-DFL by a transmission electron microscope, resulting in a lower TDD. The 500-nm-thick GaAs bulk layer and InAs QDs were regrown on GaAs-on-Si templates and the optical properties were also evaluated by photoluminescence (PL). The highest PL peak intensity of the HT-DFL indicates that less non-radiative recombination in both the GaAs bulk and QDs occurred due to the reduced TDD. The GaAs p–i–n diodes were also fabricated to analyze the bulk leakage (J(B)) and the surface leakage current. The J(B) of HT-DFL shows the lowest value of 3.625 × 10(–7) A/cm(−2) at applied bias voltage of 1 V, which is 20 times lower than the J(B) of the control sample without DFLs. This supports that the high-temperature growth of DFL can make a good performance GaAs device on Si.
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spelling pubmed-97635232022-12-21 Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si Kim, HoSung Geum, Dae-Myeong Ko, Young-Ho Han, Won-Seok Nanoscale Res Lett Research GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values of LT-DFL and HT-DFL were 5.2 × 10(7) cm(−2) and 1.5 × 10(7) cm(−2), respectively. The 1.5 × 10(7) cm(−2) of TDD in HT-DFL is reduced by almost one order compared to the 1.2 × 10(8) cm(−2) of that in the control sample without DFLs. The annihilation process was mainly observed in the HT-DFL by a transmission electron microscope, resulting in a lower TDD. The 500-nm-thick GaAs bulk layer and InAs QDs were regrown on GaAs-on-Si templates and the optical properties were also evaluated by photoluminescence (PL). The highest PL peak intensity of the HT-DFL indicates that less non-radiative recombination in both the GaAs bulk and QDs occurred due to the reduced TDD. The GaAs p–i–n diodes were also fabricated to analyze the bulk leakage (J(B)) and the surface leakage current. The J(B) of HT-DFL shows the lowest value of 3.625 × 10(–7) A/cm(−2) at applied bias voltage of 1 V, which is 20 times lower than the J(B) of the control sample without DFLs. This supports that the high-temperature growth of DFL can make a good performance GaAs device on Si. Springer US 2022-12-19 /pmc/articles/PMC9763523/ /pubmed/36534366 http://dx.doi.org/10.1186/s11671-022-03762-9 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Research
Kim, HoSung
Geum, Dae-Myeong
Ko, Young-Ho
Han, Won-Seok
Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
title Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
title_full Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
title_fullStr Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
title_full_unstemmed Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
title_short Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
title_sort effects of high-temperature growth of dislocation filter layers in gaas-on-si
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9763523/
https://www.ncbi.nlm.nih.gov/pubmed/36534366
http://dx.doi.org/10.1186/s11671-022-03762-9
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