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Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si

GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values o...

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Detalles Bibliográficos
Autores principales:	Kim, HoSung, Geum, Dae-Myeong, Ko, Young-Ho, Han, Won-Seok
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2022
Materias:	Research
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9763523/ https://www.ncbi.nlm.nih.gov/pubmed/36534366 http://dx.doi.org/10.1186/s11671-022-03762-9

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