Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets

[Image: see text] The influence of the bottom TiO(2) interfacial layer grown by atomic layer deposition on the ferroelectric properties of the TiN/Hf(0.5)Zr(0.5)O(2)/TiN capacitors is systematically investigated. We show that the integration of the TiO(2) layer leads to an increase in the polar orth...

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Detalles Bibliográficos
Autores principales: Koroleva, Aleksandra A., Chernikova, Anna G., Zarubin, Sergei S., Korostylev, Evgeny, Khakimov, Roman R., Zhuk, Maksim Yu., Markeev, Andrey M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9773930/
https://www.ncbi.nlm.nih.gov/pubmed/36570284
http://dx.doi.org/10.1021/acsomega.2c06237

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9773930/
https://www.ncbi.nlm.nih.gov/pubmed/36570284
http://dx.doi.org/10.1021/acsomega.2c06237

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