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Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets

[Image: see text] The influence of the bottom TiO(2) interfacial layer grown by atomic layer deposition on the ferroelectric properties of the TiN/Hf(0.5)Zr(0.5)O(2)/TiN capacitors is systematically investigated. We show that the integration of the TiO(2) layer leads to an increase in the polar orth...

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Autores principales: Koroleva, Aleksandra A., Chernikova, Anna G., Zarubin, Sergei S., Korostylev, Evgeny, Khakimov, Roman R., Zhuk, Maksim Yu., Markeev, Andrey M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9773930/
https://www.ncbi.nlm.nih.gov/pubmed/36570284
http://dx.doi.org/10.1021/acsomega.2c06237
_version_ 1784855289230524416
author Koroleva, Aleksandra A.
Chernikova, Anna G.
Zarubin, Sergei S.
Korostylev, Evgeny
Khakimov, Roman R.
Zhuk, Maksim Yu.
Markeev, Andrey M.
author_facet Koroleva, Aleksandra A.
Chernikova, Anna G.
Zarubin, Sergei S.
Korostylev, Evgeny
Khakimov, Roman R.
Zhuk, Maksim Yu.
Markeev, Andrey M.
author_sort Koroleva, Aleksandra A.
collection PubMed
description [Image: see text] The influence of the bottom TiO(2) interfacial layer grown by atomic layer deposition on the ferroelectric properties of the TiN/Hf(0.5)Zr(0.5)O(2)/TiN capacitors is systematically investigated. We show that the integration of the TiO(2) layer leads to an increase in the polar orthorhombic phase content in the Hf(0.5)Zr(0.5)O(2) film. In addition, the crystalline structure of the Hf(0.5)Zr(0.5)O(2) film is highly dependent on the thickness of the TiO(2) inset, with monoclinic phase stabilization after the increase of TiO(2) thickness. Special attention in this work is given to the key reliability parameters—retention and endurance. We demonstrate that the integration of the TiO(2) inset induces valuable retention improvement. Using a novel approach to the depolarization measurements, we show that the depolarization contribution to the retention loss is insignificant, which leaves the imprint effect as the root of the retention loss in TiN/TiO(2)/Hf(0.5)Zr(0.5)O(2)/TiN devices. We believe that the integration of the insulator interfacial layer suppresses the scavenging effect from the bottom TiN electrode, leading to a decrease in the oxygen vacancy content in the Hf(0.5)Zr(0.5)O(2) film, which is the main reason for imprint mitigation. At the same time, although the observed retention improvement is very promising for the upcoming technological integration, the field cycling testing revealed the endurance limitations linked to the phase transitions in the TiO(2) layer and the rise of the effective electric field applied to the Hf(0.5)Zr(0.5)O(2) film.
format Online
Article
Text
id pubmed-9773930
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-97739302022-12-23 Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets Koroleva, Aleksandra A. Chernikova, Anna G. Zarubin, Sergei S. Korostylev, Evgeny Khakimov, Roman R. Zhuk, Maksim Yu. Markeev, Andrey M. ACS Omega [Image: see text] The influence of the bottom TiO(2) interfacial layer grown by atomic layer deposition on the ferroelectric properties of the TiN/Hf(0.5)Zr(0.5)O(2)/TiN capacitors is systematically investigated. We show that the integration of the TiO(2) layer leads to an increase in the polar orthorhombic phase content in the Hf(0.5)Zr(0.5)O(2) film. In addition, the crystalline structure of the Hf(0.5)Zr(0.5)O(2) film is highly dependent on the thickness of the TiO(2) inset, with monoclinic phase stabilization after the increase of TiO(2) thickness. Special attention in this work is given to the key reliability parameters—retention and endurance. We demonstrate that the integration of the TiO(2) inset induces valuable retention improvement. Using a novel approach to the depolarization measurements, we show that the depolarization contribution to the retention loss is insignificant, which leaves the imprint effect as the root of the retention loss in TiN/TiO(2)/Hf(0.5)Zr(0.5)O(2)/TiN devices. We believe that the integration of the insulator interfacial layer suppresses the scavenging effect from the bottom TiN electrode, leading to a decrease in the oxygen vacancy content in the Hf(0.5)Zr(0.5)O(2) film, which is the main reason for imprint mitigation. At the same time, although the observed retention improvement is very promising for the upcoming technological integration, the field cycling testing revealed the endurance limitations linked to the phase transitions in the TiO(2) layer and the rise of the effective electric field applied to the Hf(0.5)Zr(0.5)O(2) film. American Chemical Society 2022-12-07 /pmc/articles/PMC9773930/ /pubmed/36570284 http://dx.doi.org/10.1021/acsomega.2c06237 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Koroleva, Aleksandra A.
Chernikova, Anna G.
Zarubin, Sergei S.
Korostylev, Evgeny
Khakimov, Roman R.
Zhuk, Maksim Yu.
Markeev, Andrey M.
Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
title Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
title_full Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
title_fullStr Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
title_full_unstemmed Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
title_short Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
title_sort retention improvement of hzo-based ferroelectric capacitors with tio(2) insets
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9773930/
https://www.ncbi.nlm.nih.gov/pubmed/36570284
http://dx.doi.org/10.1021/acsomega.2c06237
work_keys_str_mv AT korolevaaleksandraa retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets
AT chernikovaannag retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets
AT zarubinsergeis retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets
AT korostylevevgeny retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets
AT khakimovromanr retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets
AT zhukmaksimyu retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets
AT markeevandreym retentionimprovementofhzobasedferroelectriccapacitorswithtio2insets