Surface Passivation of III–V GaAs Nanopillars by Low-Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

[Image: see text] Numerous efforts have been devoted to improve the electronic and optical properties of III–V compound materials via reduction of their nonradiative states, aiming at highly efficient III–V sub-micrometer active devices and circuits. Despite many advances, the poor reproducibility a...

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Detalles Bibliográficos
Autores principales: Jacob, Bejoys, Camarneiro, Filipe, Borme, Jérôme, Bondarchuk, Oleksandr, Nieder, Jana B., Romeira, Bruno
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9778088/
https://www.ncbi.nlm.nih.gov/pubmed/36570334
http://dx.doi.org/10.1021/acsaelm.2c00195

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9778088/
https://www.ncbi.nlm.nih.gov/pubmed/36570334
http://dx.doi.org/10.1021/acsaelm.2c00195

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