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Surface Passivation of III–V GaAs Nanopillars by Low-Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices
[Image: see text] Numerous efforts have been devoted to improve the electronic and optical properties of III–V compound materials via reduction of their nonradiative states, aiming at highly efficient III–V sub-micrometer active devices and circuits. Despite many advances, the poor reproducibility a...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9778088/ https://www.ncbi.nlm.nih.gov/pubmed/36570334 http://dx.doi.org/10.1021/acsaelm.2c00195 |