Sublayer-Enhanced Growth of Highly Ordered Mn(5)Ge(3) Thin Film on Si(111)

Mn(5)Ge(3) epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth m...

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Detalles Bibliográficos
Autores principales: Yakovlev, Ivan, Tarasov, Ivan, Lukyanenko, Anna, Rautskii, Mikhail, Solovyov, Leonid, Sukhachev, Alexander, Volochaev, Mikhail, Efimov, Dmitriy, Goikhman, Aleksandr, Bondarev, Ilya, Varnakov, Sergey, Ovchinnikov, Sergei, Volkov, Nikita, Tarasov, Anton
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9780961/
https://www.ncbi.nlm.nih.gov/pubmed/36558219
http://dx.doi.org/10.3390/nano12244365

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9780961/
https://www.ncbi.nlm.nih.gov/pubmed/36558219
http://dx.doi.org/10.3390/nano12244365

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