Improving the Performance of Solution−Processed Quantum Dot Light−Emitting Diodes via a HfO(x) Interfacial Layer

One of the major obstacles in the way of high−performance quantum dot light−emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a balanced charge injection was often achieved by lowering...

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Detalles Bibliográficos
Autores principales: Jeong, Jun Hyung, Kim, Min Gye, Ma, Jin Hyun, Park, Min Ho, Ha, Hyoun Ji, Kang, Seong Jae, Maeng, Min-Jae, Kim, Young Duck, Park, Yongsup, Kang, Seong Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781304/
https://www.ncbi.nlm.nih.gov/pubmed/36556781
http://dx.doi.org/10.3390/ma15248977

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781304/
https://www.ncbi.nlm.nih.gov/pubmed/36556781
http://dx.doi.org/10.3390/ma15248977

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