Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled

SiO(2) etching characteristics were investigated in detail. Patterned SiO(2) was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bi...

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Detalles Bibliográficos
Autores principales: Jeong, Won-nyoung, Lee, Young-seok, Cho, Chul-hee, Seong, In-ho, You, Shin-jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781520/
https://www.ncbi.nlm.nih.gov/pubmed/36558310
http://dx.doi.org/10.3390/nano12244457

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781520/
https://www.ncbi.nlm.nih.gov/pubmed/36558310
http://dx.doi.org/10.3390/nano12244457

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