Cargando…
Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled
SiO(2) etching characteristics were investigated in detail. Patterned SiO(2) was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bi...
Autores principales: | Jeong, Won-nyoung, Lee, Young-seok, Cho, Chul-hee, Seong, In-ho, You, Shin-jae |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781520/ https://www.ncbi.nlm.nih.gov/pubmed/36558310 http://dx.doi.org/10.3390/nano12244457 |
Ejemplares similares
-
Characterization of SiO(2) Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas
por: Cho, Chulhee, et al.
Publicado: (2021) -
Database Development of SiO(2) Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe
por: Lee, Youngseok, et al.
Publicado: (2022) -
Contribution of Ion Energy and Flux on High-Aspect Ratio SiO(2) Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C(4)F(8) Plasma: Individual Ion Energy and Flux Controlled
por: Jeong, Wonnyoung, et al.
Publicado: (2023) -
Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma
por: Seong, Inho, et al.
Publicado: (2022) -
Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO(2)
por: Lee, Youngseok, et al.
Publicado: (2022)