Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studi...

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Detalles Bibliográficos
Autores principales: Petrushkov, Mikhail O., Abramkin, Demid S., Emelyanov, Eugeny A., Putyato, Mikhail A., Komkov, Oleg S., Firsov, Dmitrii D., Vasev, Andrey V., Yesin, Mikhail Yu., Bakarov, Askhat K., Loshkarev, Ivan D., Gutakovskii, Anton K., Atuchin, Victor V., Preobrazhenskii, Valery V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782000/
https://www.ncbi.nlm.nih.gov/pubmed/36558302
http://dx.doi.org/10.3390/nano12244449

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782000/
https://www.ncbi.nlm.nih.gov/pubmed/36558302
http://dx.doi.org/10.3390/nano12244449

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