Patterning of Silicon Substrate with Self-Assembled Monolayers Using Vertically Aligned Carbon Nanotube Electron Sources

We introduce a novel patterning technique based on e-beam lithography using vertically aligned carbon nanotube (VACNT) emitters with self-assembled monolayers (SAMs). A 20 μm line width of silicon wafer patterning was successfully demonstrated using octadecyl trichlorosilane (OTS) as a photoresist....

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Detalles Bibliográficos
Autores principales: Yu, Yi Yin, Rodiansyah, Alfi, Sawant, Jaydip, Park, Kyu Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782119/
https://www.ncbi.nlm.nih.gov/pubmed/36558275
http://dx.doi.org/10.3390/nano12244420

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782119/
https://www.ncbi.nlm.nih.gov/pubmed/36558275
http://dx.doi.org/10.3390/nano12244420

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