An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the p...

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Detalles Bibliográficos
Autores principales: Xu, Zebin, Yan, Jiahui, Ji, Meilin, Zhou, Yongxin, Wang, Dandan, Wang, Yuanzhi, Mai, Zhihong, Zhao, Xuefeng, Nan, Tianxiang, Xing, Guozhong, Zhang, Songsong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782552/
https://www.ncbi.nlm.nih.gov/pubmed/36557549
http://dx.doi.org/10.3390/mi13122250

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782552/
https://www.ncbi.nlm.nih.gov/pubmed/36557549
http://dx.doi.org/10.3390/mi13122250

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