Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-qualit...

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Detalles Bibliográficos
Autores principales: Jiang, Shicong, Wu, Wan-Yu, Ren, Fangbin, Hsu, Chia-Hsun, Zhang, Xiaoying, Gao, Peng, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang, Zhu, Wenzhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782612/
https://www.ncbi.nlm.nih.gov/pubmed/36555844
http://dx.doi.org/10.3390/ijms232416204

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782612/
https://www.ncbi.nlm.nih.gov/pubmed/36555844
http://dx.doi.org/10.3390/ijms232416204

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