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Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture
In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-qualit...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782612/ https://www.ncbi.nlm.nih.gov/pubmed/36555844 http://dx.doi.org/10.3390/ijms232416204 |
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author | Jiang, Shicong Wu, Wan-Yu Ren, Fangbin Hsu, Chia-Hsun Zhang, Xiaoying Gao, Peng Wuu, Dong-Sing Huang, Chien-Jung Lien, Shui-Yang Zhu, Wenzhang |
author_facet | Jiang, Shicong Wu, Wan-Yu Ren, Fangbin Hsu, Chia-Hsun Zhang, Xiaoying Gao, Peng Wuu, Dong-Sing Huang, Chien-Jung Lien, Shui-Yang Zhu, Wenzhang |
author_sort | Jiang, Shicong |
collection | PubMed |
description | In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH(3)-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH(2), NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH(2) radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH(3)/Ar plasma PEALD involving oxygen participation or not is also discussed in the study. |
format | Online Article Text |
id | pubmed-9782612 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-97826122022-12-24 Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture Jiang, Shicong Wu, Wan-Yu Ren, Fangbin Hsu, Chia-Hsun Zhang, Xiaoying Gao, Peng Wuu, Dong-Sing Huang, Chien-Jung Lien, Shui-Yang Zhu, Wenzhang Int J Mol Sci Article In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH(3)-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH(2), NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH(2) radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH(3)/Ar plasma PEALD involving oxygen participation or not is also discussed in the study. MDPI 2022-12-19 /pmc/articles/PMC9782612/ /pubmed/36555844 http://dx.doi.org/10.3390/ijms232416204 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Jiang, Shicong Wu, Wan-Yu Ren, Fangbin Hsu, Chia-Hsun Zhang, Xiaoying Gao, Peng Wuu, Dong-Sing Huang, Chien-Jung Lien, Shui-Yang Zhu, Wenzhang Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture |
title | Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture |
title_full | Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture |
title_fullStr | Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture |
title_full_unstemmed | Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture |
title_short | Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture |
title_sort | growth of gan thin films using plasma enhanced atomic layer deposition: effect of ammonia-containing plasma power on residual oxygen capture |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782612/ https://www.ncbi.nlm.nih.gov/pubmed/36555844 http://dx.doi.org/10.3390/ijms232416204 |
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