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Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-qualit...

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Detalles Bibliográficos
Autores principales:	Jiang, Shicong, Wu, Wan-Yu, Ren, Fangbin, Hsu, Chia-Hsun, Zhang, Xiaoying, Gao, Peng, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang, Zhu, Wenzhang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782612/ https://www.ncbi.nlm.nih.gov/pubmed/36555844 http://dx.doi.org/10.3390/ijms232416204

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