Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Substrate voltage (V(SUB)) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be affected by neutral/ionized donor and acceptor t...

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Detalles Bibliográficos
Autores principales: Lin, Yuan, Kao, Min-Lu, Weng, You-Chen, Dee, Chang-Fu, Chen, Shih-Chen, Kuo, Hao-Chung, Lin, Chun-Hsiung, Chang, Edward-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9783546/
https://www.ncbi.nlm.nih.gov/pubmed/36557439
http://dx.doi.org/10.3390/mi13122140

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9783546/
https://www.ncbi.nlm.nih.gov/pubmed/36557439
http://dx.doi.org/10.3390/mi13122140

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