Cargando…

Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport

The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (PVT) growth of AlN crystal, the c- and m-plane AlN...

Descripción completa

Detalles Bibliográficos
Autores principales:	Yao, Xiaogang, Kong, Zhen, Liu, Shengfu, Wang, Yong, Shao, Yongliang, Wu, Yongzhong, Hao, Xiaopeng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784680/ https://www.ncbi.nlm.nih.gov/pubmed/36556598 http://dx.doi.org/10.3390/ma15248791

Ejemplares similares

X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals
por: Wicht, Thomas, et al.
Publicado: (2020)

Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method
por: Zhang, Shuping, et al.
Publicado: (2023)

The Physical Vapor Transport Method for Bulk AlN Crystal Growth
por: Chen, Wen-Hao, et al.
Publicado: (2019)

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates
por: Nakanishi, Yudai, et al.
Publicado: (2023)

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
por: Wang, Jiaming, et al.
Publicado: (2017)

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
por: Tasi, Chi-Tsung, et al.
Publicado: (2018)

Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
por: Liu, Ting, et al.
Publicado: (2016)

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios
por: Xie, Luxiao, et al.
Publicado: (2022)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers
por: Zhao, Guijuan, et al.
Publicado: (2016)

Nitrogen-Polar (000 [Formula: see text]) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
por: Song, Jie, et al.
Publicado: (2017)

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD
por: Wei, Wenwang, et al.
Publicado: (2021)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Tamura, Yosuke, et al.
Publicado: (2015)

Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
por: Lin, Pei-Yin, et al.
Publicado: (2014)

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
por: Niu, Lang, et al.
Publicado: (2011)

The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing
por: Zhang, Fabi, et al.
Publicado: (2022)

Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers
por: Liu, Chuan-Yang, et al.
Publicado: (2019)

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
por: Liu, Sanjie, et al.
Publicado: (2017)

High-quality AlN grown with a single substrate temperature below 1200 °C
por: Huang, Chun-Pin, et al.
Publicado: (2017)

High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
por: Nagamatsu, Kentaro, et al.
Publicado: (2023)

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
por: Xie, Luxiao, et al.
Publicado: (2022)

High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE
por: Huo, Qin, et al.
Publicado: (2018)

Assessment of AlN/Mg–8Al Composites Reinforced with In Situ and/or Ex Situ AlN Particles
por: Gao, Tong, et al.
Publicado: (2020)

Competitive growth mechanisms of AlN on Si (111) by MOVPE
por: Feng, Yuxia, et al.
Publicado: (2014)

Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers
por: Li, Nan, et al.
Publicado: (2015)

Influence of AlN(0001) Surface Reconstructions on the Wettability of an Al/AlN System: A First-Principle Study
por: Cao, Junhua, et al.
Publicado: (2018)

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
por: Kim, Hogyoung, et al.
Publicado: (2018)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Author Correction: High-quality AlN grown with a single substrate temperature below 1200 °C
por: Huang, Chun-Pin, et al.
Publicado: (2018)

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN
por: Zaiter, Aly, et al.
Publicado: (2022)

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
por: Zhang, Lei, et al.
Publicado: (2014)

Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC
por: Serban, Andreea Bianca, et al.
Publicado: (2021)

High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
por: Lei, Liang, et al.
Publicado: (2022)

Growth of Semi-Polar (10 [Formula: see text] 3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE
por: Li, Xu, et al.
Publicado: (2021)

AlN formation by an Al/GaN substitution reaction
por: Noorprajuda, Marsetio, et al.
Publicado: (2020)

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
por: Kamarundzaman, Anas, et al.
Publicado: (2021)

Strain-stress study of Al(x)Ga(1−x)N/AlN heterostructures on c-plane sapphire and related optical properties
por: Feng, Yining, et al.
Publicado: (2019)

Berkovich Nanoindentation on AlN Thin Films
por: Jian, Sheng-Rui, et al.
Publicado: (2010)

Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications
por: Tran, Binh Tinh, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_ehtq7dut5bkop7bn4bqcfo0gm8