Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport

The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (PVT) growth of AlN crystal, the c- and m-plane AlN...

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Detalles Bibliográficos
Autores principales: Yao, Xiaogang, Kong, Zhen, Liu, Shengfu, Wang, Yong, Shao, Yongliang, Wu, Yongzhong, Hao, Xiaopeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784680/
https://www.ncbi.nlm.nih.gov/pubmed/36556598
http://dx.doi.org/10.3390/ma15248791

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784680/
https://www.ncbi.nlm.nih.gov/pubmed/36556598
http://dx.doi.org/10.3390/ma15248791

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