Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. We prepared a series of TFT devices with a top contact and bottom gate structure, in which the top contact was di...

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Detalles Bibliográficos
Autores principales: Yan, Xingzhen, Li, Bo, Song, Kaian, Zhang, Yiqiang, Wang, Yanjie, Yang, Fan, Wang, Chao, Chi, Yaodan, Yang, Xiaotian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784808/
https://www.ncbi.nlm.nih.gov/pubmed/36557506
http://dx.doi.org/10.3390/mi13122207

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784808/
https://www.ncbi.nlm.nih.gov/pubmed/36557506
http://dx.doi.org/10.3390/mi13122207

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