N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain

Source-gated transistors (SGTs) are emerging devices enabling high-gain single-stage amplifiers with low complexity. To date, the p-type printed organic SGT (OSGT) has been developed and showed high gain and low power consumption. However, complementary OSGT circuits remained impossible because of t...

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Detalles Bibliográficos
Autores principales: Hemmi, Yudai, Ikeda, Yuji, Sporea, Radu A., Takeda, Yasunori, Tokito, Shizuo, Matsui, Hiroyuki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785666/
https://www.ncbi.nlm.nih.gov/pubmed/36558295
http://dx.doi.org/10.3390/nano12244441

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785666/
https://www.ncbi.nlm.nih.gov/pubmed/36558295
http://dx.doi.org/10.3390/nano12244441

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